TN930 Datasheet. Specs and Replacement

Type Designator: TN930  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

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TN930 datasheet

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TN930

STN93003 High voltage fast-switching PNP power transistor Features High voltage capability Very high switching speed 4 3 Application 2 1 Electronics ballasts for fluorescent lighting SOT-223 Description The device is manufactured using high voltage multi-epitaxial planar technology for high I switching speeds and high voltage capability. It uses a cellular emit... See More ⇒

Detailed specifications: TN834, TN835, TN901, TN911, TN918, TN918R, TN929, TN929A, 431, TN930A, TN930R, TP1613, TP1613A, TP1613R, TP1711, TP1893, TP1893R

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