TN930 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN930
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
TN930 Transistor Equivalent Substitute - Cross-Reference Search
TN930 Datasheet (PDF)
0.1. Size:270K st
stn93003.pdf
stn93003.pdf
STN93003High voltage fast-switchingPNP power transistorFeatures High voltage capability Very high switching speed 43Application21 Electronics ballasts for fluorescent lightingSOT-223 DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Iswitching speeds and high voltage capability. It uses a cellular emit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
