All Transistors. TN930 Datasheet

 

TN930 Datasheet and Replacement


   Type Designator: TN930
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
 

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TN930 Datasheet (PDF)

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 stn93003.pdf pdf_icon

TN930

STN93003High voltage fast-switchingPNP power transistorFeatures High voltage capability Very high switching speed 43Application21 Electronics ballasts for fluorescent lightingSOT-223 DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Iswitching speeds and high voltage capability. It uses a cellular emit

Datasheet: TN834 , TN835 , TN901 , TN911 , TN918 , TN918R , TN929 , TN929A , TIP32C , TN930A , TN930R , TP1613 , TP1613A , TP1613R , TP1711 , TP1893 , TP1893R .

History: DRA5114E | BFP842ESD | BU103DH | BU103BH | 40408L | DMC96403 | 2SA208H

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