All Transistors. TN930 Datasheet

 

TN930 Datasheet and Replacement


   Type Designator: TN930
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 TN930 Transistor Equivalent Substitute - Cross-Reference Search

   

TN930 Datasheet (PDF)

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TN930

STN93003 High voltage fast-switching PNP power transistor Features High voltage capability Very high switching speed 4 3 Application 2 1 Electronics ballasts for fluorescent lighting SOT-223 Description The device is manufactured using high voltage multi-epitaxial planar technology for high I switching speeds and high voltage capability. It uses a cellular emit... See More ⇒

Datasheet: TN834 , TN835 , TN901 , TN911 , TN918 , TN918R , TN929 , TN929A , 431 , TN930A , TN930R , TP1613 , TP1613A , TP1613R , TP1711 , TP1893 , TP1893R .

History: DDTA124GUA | 2SD763 | 2SD1792 | 2SC3973B | DDTB123EU | NB023HK | RT1P14BC

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