UMA3N Datasheet. Specs and Replacement
Type Designator: UMA3N 📄📄
SMD Transistor Code: A3
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
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UMA3N datasheet
EMA3 / UMA3N / FMA3A Transistors Emitter common (dual digital transistors) EMA3 / UMA3N / FMA3A Features External dimensions (Unit mm) 1) Two DTA143Ts in a EMT or UMT or SMT package. EMA3 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Epitaxial planar type PNP silicon transistor (Built-in Each lead has same dimensions resistor... See More ⇒
uma3n fma3a a3 sot23-5 sot353.pdf ![]()
Transistors Emitter common (dual digital transistors) UMA3N / FMA3A FFeatures FExternal dimensions (Units mm) 1) Two DTA143Ts in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon tran- sistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. FAbsolute maximum ratings (Ta = 25_C) (96-... See More ⇒
UMA3N General purpose transistors (dual transistors) SOT-353 FEATURES Two DTA143T chips in a package Mounting cost and area be cut in half 1 Marking A3 Equivalent circuit Absolute maximum ratings (Ta=25 ) Symbol Parameter Limits Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Contin... See More ⇒
Detailed specifications: U2TG406, U2TG408, U2TG410, UC1100A, UMA10N, UMA11N, UMA1N, UMA2N, A1941, UMA4N, UMA5N, UMA6N, UMA7N, UMA8N, UMA9N, UMB10N, UMB11N
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