UMB8N Datasheet. Specs and Replacement
Type Designator: UMB8N 📄📄
SMD Transistor Code: B8
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SC-88
📄📄 Copy
UMB8N Substitution
- BJT ⓘ Cross-Reference Search
UMB8N datasheet
umb8n imb8a b8 sot363 sot23-6.pdf 
UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8 Transistors Transistors UMG4N / UMG7N / UMH4N / UMH8N / FMG4A / FMG7A / IMH4A / IMH8 (96-448-A114T) ... See More ⇒
Detailed specifications: UMB16N, UMB1N, UMB2N, UMB3N, UMB4N, UMB5N, UMB6N, MMUN2235LT1G, 2SA1837, UMB9N, UMC1N, UMC2N, UMC3N, UMC4N, UMC5N, PDTA115EEF, PDTA115EK
Keywords - UMB8N pdf specs
UMB8N cross reference
UMB8N equivalent finder
UMB8N pdf lookup
UMB8N substitution
UMB8N replacement
