UMC5N Datasheet. Specs and Replacement
Type Designator: UMC5N 📄📄
SMD Transistor Code: C5
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 68*30
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UMC5N datasheet
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Transistors Power management (dual digital transistors) UMC5N / FMC5A FFeatures FExternal dimensions (Units mm) 1) Both the DTA143X chip and DTC144E chip in a UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN/PNP silicon transistor (Built-in resistor type) FAbsolute maximum ratings (Ta = 25_... See More ⇒
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UMC2NT1G, UMC3NT1G, UMC5NT1G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 R2 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter re... See More ⇒
Detailed specifications: UMB6N, MMUN2235LT1G, UMB8N, UMB9N, UMC1N, UMC2N, UMC3N, UMC4N, TIP31, PDTA115EEF, PDTA115EK, UMD10N, PDTA115ES, PDTA115TK, PDTA115TS, UMD2N, UMD3N
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