All Transistors. UMD6N Datasheet

 

UMD6N Datasheet and Replacement


   Type Designator: UMD6N
   SMD Transistor Code: D6
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC88 SOT353
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UMD6N Datasheet (PDF)

 ..1. Size:67K  rohm
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UMD6N

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)automatic mounting machines. (6) (1)1.21.63) Transistor elements are independent, elimin

 ..2. Size:66K  rohm
umd6n imd6a d6 sot23-6sot363.pdf pdf_icon

UMD6N

TransistorsGeneral purpose(dual digital transistors)UMD6N / IMD6AFFeatures FExternal dimensions (Units: mm)1) Both the DTA143T chip andDTC143T chip in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureA PNP a

 ..3. Size:124K  secos
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UMD6N

UMD6N Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-363 DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. A Mounting cost and area can be cut in half. ELB

 ..4. Size:404K  htsemi
umd6n.pdf pdf_icon

UMD6N

UMD6N DIGITAL TRANSISTOR (NPN+ PNP)SOT-363 FEATURES DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING:D6 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-em

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3489 | TD163C | RT2P01M | DTA114TMFHA | CTP1732 | CP502 | KST1009F1

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