UMG5N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMG5N
SMD Transistor Code: G5
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SC88A
SOT353
UMG5N Transistor Equivalent Substitute - Cross-Reference Search
UMG5N Datasheet (PDF)
umg5n.pdf
UMG5N dual digital transistors (PNP+ PNP)SOT-363 FEATURES Two DTA114Y chips in a package Marking: G5 1Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage 50 V IC(MAX) Output Current 100 mA Vi Input Voltage -6 to +40 V PD Power Dissipation 150 mW TJ Junction Temperature 150 Tstg Storage Temperature -55~+150
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
