All Transistors. UMG5N Datasheet

 

UMG5N Datasheet and Replacement


   Type Designator: UMG5N
   SMD Transistor Code: G5
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SC88A SOT353
 

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UMG5N Datasheet (PDF)

 ..1. Size:34K  rohm
 umg5n fmg5a g5 sot353 sot23-5.pdf pdf_icon

UMG5N

(94S-781-A114Y

 ..2. Size:301K  htsemi
 umg5n.pdf pdf_icon

UMG5N

UMG5N dual digital transistors (PNP+ PNP)SOT-363 FEATURES Two DTA114Y chips in a package Marking: G5 1Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage 50 V IC(MAX) Output Current 100 mA Vi Input Voltage -6 to +40 V PD Power Dissipation 150 mW TJ Junction Temperature 150 Tstg Storage Temperature -55~+150

Datasheet: UMD9N , UMG11N , PDTA123EK , PDTA123ES , UMG1N , UMG2N , UMG3N , UMG4N , SS8050 , UMG6N , UMG8N , UMG9N , UMH10N , UMH11N , UMH1N , UMH2N , UMH3N .

History: 2SA1753 | BFY67 | BDY13B | SK3194 | 2SC3953D | F116 | KT892A

Keywords - UMG5N transistor datasheet

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