UMG5N Datasheet. Specs and Replacement

Type Designator: UMG5N  📄📄 

SMD Transistor Code: G5

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SC88A SOT353

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UMG5N datasheet

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Detailed specifications: UMD9N, UMG11N, PDTA123EK, PDTA123ES, UMG1N, UMG2N, UMG3N, UMG4N, 2222A, UMG6N, UMG8N, UMG9N, UMH10N, UMH11N, UMH1N, UMH2N, UMH3N

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