UMG6N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMG6N
SMD Transistor Code: G6
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC88A SOT353
UMG6N Transistor Equivalent Substitute - Cross-Reference Search
UMG6N Datasheet (PDF)
..1. Size:154K rohm
emg6 umg6n fmg6a.pdf
emg6 umg6n fmg6a.pdf
General purpose (dual digital transistors) EMG6 / UMG6N / FMG6A Features Dimensions (Unit : mm) 1) Two DTC144T chips in a EMT or UMT or SMT package. EMG61.2 Equivalent circuit 1.6EMG6 / UMG6N FMG6(3) (2) (1) (3) (4) (5)R1 R1 R1 R1ROHM : EMT5 Each lead has same dimensionsDTr2 DTr1 DTr2 DTr1(4) (5) (2) (1)R1=47k R1=47kUMG6N1.25 Absolute maximum ratings (T
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
