UMG6N Datasheet. Specs and Replacement
Type Designator: UMG6N 📄📄
SMD Transistor Code: G6
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
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UMG6N datasheet
General purpose (dual digital transistors) EMG6 / UMG6N / FMG6A Features Dimensions (Unit mm) 1) Two DTC144T chips in a EMT or UMT or SMT package. EMG6 1.2 Equivalent circuit 1.6 EMG6 / UMG6N FMG6 (3) (2) (1) (3) (4) (5) R1 R1 R1 R1 ROHM EMT5 Each lead has same dimensions DTr2 DTr1 DTr2 DTr1 (4) (5) (2) (1) R1=47k R1=47k UMG6N 1.25 Absolute maximum ratings (T... See More ⇒
Detailed specifications: UMG11N, PDTA123EK, PDTA123ES, UMG1N, UMG2N, UMG3N, UMG4N, UMG5N, 2SC5198, UMG8N, UMG9N, UMH10N, UMH11N, UMH1N, UMH2N, UMH3N, UMH4N
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BJT Parameters and How They Relate
History: UMG2N | UMD6N
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