UMH4N Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

UMH4N Datasheet. Specs and Replacement

Type Designator: UMH4N 📄📄

SMD Transistor Code: H4

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC88 SOT353

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UMH4N Substitution

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UMH4N datasheet

..1. Size:42K rohm

emh4 umh4n imh4a.pdf pdf_icon

EMH4 / UMH4N / IMH4A Transistors General purpose (dual digital transistors) EMH4 / UMH4N / IMH4A External dimensions (Unit mm) Features 1) Two DTC114T chips in a EMT or UMT or SMT EMH4 package. ( ) ( ) 4 3 (5) (2) (6) ( ) 1 Equivalent circuits 1.2 1pin mark 1.6 EMH4 / UMH4N IMH4A (3) (2) (1) (4) (5) (6) R1 R1 ROHM EMT6 Each lead has same dimensions R1 R1 ... See More ⇒

..2. Size:48K rohm

umh4n imh4a h4 sot363 sot23-6.pdf pdf_icon

(96-448-A114T) ... See More ⇒

0.1. Size:1263K rohm

emh4fha umh4nfha imh4afra.pdf pdf_icon

EMH4 / UMH4N / IMH4A EMH4FHA / UMH4NFHA / IMH4AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCEO 50V (4) (4) (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 10kW EMH4 UMH4N EMH4FHA UMH4NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4) ... See More ⇒

0.2. Size:1223K rohm

emh4fha umh4nfha.pdf pdf_icon