UMH8N Datasheet. Specs and Replacement
Type Designator: UMH8N 📄📄
SMD Transistor Code: H8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
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UMH8N Substitution
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UMH8N datasheet
UMH8N / IMH8A Transistors General purpose (dual digital transistors) UMH8N / IMH8A External dimensions (Unit mm) Features 1) Two DTC114T chips in a EMT or UMT or SMT package. UMH8N 1.25 Equivalent circuits 2.1 UMH8N IMH8A (3) (2) (1) (4) (5) (6) 0.1Min. R1 R1 ROHM UMT6 Each lead has same dimensions EIAJ SC-88 R1 R1 (4) (5) (6) (3) (2) (1) R1=10k R1=10k... See More ⇒
UMH8NFHA / IMH8AFRA UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline UMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) (6) (4) VCEO 50V (3) (1) IC 100mA (2) (2) (1) (3) R1 10kW UMH8NFHA IMH8AFRA UMH8N IMH8A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Bia... See More ⇒
UMH8NFHA / IMH8AFRA UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline UMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) (6) (4) VCEO 50V (3) (1) IC 100mA (2) (2) (1) (3) R1 10kW UMH8NFHA IMH8AFRA UMH8N IMH8A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Bia... See More ⇒
Detailed specifications: UMH11N, UMH1N, UMH2N, UMH3N, UMH4N, UMH5N, UMH6N, UMH7N, BC547B, UMH9N, UMS1N, UMS2N, UMT1006, UMT1007, UMT1008, UMT1009, UMT1011
Keywords - UMH8N pdf specs
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BJT Parameters and How They Relate
History: UMS2N | UMS1N
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