UMH8N Specs and Replacement
Type Designator: UMH8N
SMD Transistor Code: H8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC88 SOT353
UMH8N Transistor Equivalent Substitute - Cross-Reference Search
UMH8N detailed specifications
umh8n umh8n imh8a.pdf
UMH8N / IMH8A Transistors General purpose (dual digital transistors) UMH8N / IMH8A External dimensions (Unit mm) Features 1) Two DTC114T chips in a EMT or UMT or SMT package. UMH8N 1.25 Equivalent circuits 2.1 UMH8N IMH8A (3) (2) (1) (4) (5) (6) 0.1Min. R1 R1 ROHM UMT6 Each lead has same dimensions EIAJ SC-88 R1 R1 (4) (5) (6) (3) (2) (1) R1=10k R1=10k... See More ⇒
umh8nfha.pdf
UMH8NFHA / IMH8AFRA UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline UMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) (6) (4) VCEO 50V (3) (1) IC 100mA (2) (2) (1) (3) R1 10kW UMH8NFHA IMH8AFRA UMH8N IMH8A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Bia... See More ⇒
umh8nfha imh8afra.pdf
UMH8NFHA / IMH8AFRA UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline UMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) (6) (4) VCEO 50V (3) (1) IC 100mA (2) (2) (1) (3) R1 10kW UMH8NFHA IMH8AFRA UMH8N IMH8A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Bia... See More ⇒
Detailed specifications: UMH11N , UMH1N , UMH2N , UMH3N , UMH4N , UMH5N , UMH6N , UMH7N , BC547B , UMH9N , UMS1N , UMS2N , UMT1006 , UMT1007 , UMT1008 , UMT1009 , UMT1011 .
Keywords - UMH8N transistor specs
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