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UMT2003 Specs and Replacement

   Type Designator: UMT2003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 1000 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3

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