UMX5N Datasheet. Specs and Replacement
Type Designator: UMX5N 📄📄
SMD Transistor Code: X5
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 11 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1400 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 56
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UMX5N datasheet
High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 Features Dimensions (Unit mm) 1) Two 2SC3838K chips in a EMT or UMT or SMT package. EMX6 2) High transition frequency. (fT=3.2GHz) 3) Low output capacitance. (Cob=0.9pF) Inner circuits EMX5 / UMX5N IMX5 (3) (2) (1) (4) (5) (6) ROHM EMT6 Each lead has same dimensions Tr2 Tr2 Tr1 SOT-563 Tr1 UMX5N ... See More ⇒
High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 Features Dimensions (Unit mm) 1) Two 2SC3838K chips in a EMT or UMT or SMT package. EMX6 2) High transition frequency. (fT=3.2GHz) 3) Low output capacitance. (Cob=0.9pF) Inner circuits EMX5 / UMX5N IMX5 (3) (2) (1) (4) (5) (6) ROHM EMT6 Each lead has same dimensions Tr2 Tr2 Tr1 Tr1 UMX5N (4) (5) (... See More ⇒
Detailed specifications: UMW2N, UMW6N, UMW7N, UMW8N, UMX1N, UMX2N, UMX3N, UMX4N, TIP122, UMY1N, UMY3N, UMZ1N, UMZ2N, UN1110Q, UN1110R, UN1110S, UN1111
Keywords - UMX5N pdf specs
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BJT Parameters and How They Relate
History: UMW8N
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