All Transistors. UMZ1N Datasheet

 

UMZ1N Datasheet, Equivalent, Cross Reference Search


   Type Designator: UMZ1N
   SMD Transistor Code: Z1
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SC88 SOT353

 UMZ1N Transistor Equivalent Substitute - Cross-Reference Search

   

UMZ1N Datasheet (PDF)

 ..1. Size:2866K  rohm
emz1 umz1n imz1a.pdf

UMZ1N
UMZ1N

EMZ1 / UMZ1N / IMZ1ADatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Value SOT-563 SOT-363VCEO50VIC150mA EMZ1 UMZ1N(EMT6) (UMT6) Parameter Value SOT-457 VCEO-50VIC-150mA IMZ1A(SMT6) lF

 ..2. Size:95K  rohm
emz1 umz1n imz1a umz1n.pdf

UMZ1N
UMZ1N

EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features External dimensions (Unit : mm) 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMZ1EMT or UMT or SMT package. (4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2)(6) (1)1.2automatic mounting machines. 1.63) Transistor elements are independent,

 ..3. Size:1132K  secos
umz1n.pdf

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UMZ1N 0.15 W, 150 mA, 60 V Silicon Epitaxial Planar Elektronische Bauelemente Power Management (Dual Transistors) RoHS Compliant Product SOT-363 A suffix of -C specifies halogen & lead-free AFEATURES EL 2SA1037AK and 2SC2412K are housed independently in a package. Transistor elements independent, eliminating interference. Mounting

 ..4. Size:1043K  jiangsu
umz1n.pdf

UMZ1N
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMZ1NDUAL TRANSISTOR (NPN+PNP) SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independentlyin a package Transistor elements independent, eliminating interference Mounting cost and area can be cut in halfMARKING: Z1 Z1TR1 MAX

 ..5. Size:377K  first silicon
umz1n.pdf

UMZ1N
UMZ1N

SEMICONDUCTORUMZ1NTECHNICAL DATADual General Purpose TransistorsNPN/PNP Duals (Complimentary)65 These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.12We declare that the material of product compliance with RoHS requirements. 3SOT-363/SC-883 2

 ..6. Size:529K  cn yangzhou yangjie elec
umz1n.pdf

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RoHS COMPLIANT UMZ1NDual NPN+PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN/PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: Z1 Equivalent circuit 1 / 7 S-S3181 Yan

 0.1. Size:1552K  rohm
umz1nfha.pdf

UMZ1N
UMZ1N

UMZ1N FHADatasheetGeneral purpose transistor (dual transistors)AEC-Q101 QualifiedlOutlinelParameter Value SOT-363VCEO50VSC-88IC150mA UMT6 Parameter Value VCEO-50VIC-150mAlFeatures lInner circuitl l1)Both a 2SA1037AK chip and 2

 0.2. Size:1210K  rohm
emz1fha umz1nfha imz1afra.pdf

UMZ1N
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EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRATransistors AEC-Q101 QualifiedGeneral purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRA Features External dimensions (Unit : mm)1) Both a 2SA1037AK chip and 2SC2412K chip in a 2SA1037AKFRA 2SC2412KFRAEMZ1EMZ1FHAEMT or UMT or SMT package. (4) (3)2) Mounting possible with EMT3 o

 0.3. Size:135K  onsemi
umz1nt1g nsvumz1nt1g.pdf

UMZ1N
UMZ1N

UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mountwww.onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3AQ1 Q2ESD Rating - Machine Model: C NSV Prefix for Automotive and Other Applications Requiri

 0.4. Size:105K  onsemi
umz1nt1g.pdf

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UMZ1N

UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mounthttp://onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1Q1 Q2 ESD Rating - Human Body Model: 3AESD Rating - Machine Model: C These Devices are Pb-Free, Halogen Free/BFR Free and

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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