All Transistors. UN1121 Datasheet

 

UN1121 Datasheet and Replacement


   Type Designator: UN1121
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: M-A1
 

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UN1121 Datasheet (PDF)

 ..1. Size:142K  panasonic
 un1121 un1122 un1123 un1124 un112x un112y.pdf pdf_icon

UN1121

Transistors with built-in ResistorUNR1121/1122/1123/1124/112X/112Y(UN1121/1122/1123/1124/112X/112Y)Silicon PNP epitaxial planer transistorUnit: mm2.50.1For digital circuits 6.90.1(1.0)(1.5)(1.5)Features R 0.9 Costs can be reduced through downsizing of the equipment andR 0.7reduction of the number of parts. M type package allowing easy automatic and manual ins

Datasheet: UN1117S , UN1118 , UN1119 , UN111D , UN111E , UN111F , UN111H , UN111L , 8050 , UN1122 , UN1123 , UN1124 , UN112X , UN112Y , UN1210Q , UN1210R , UN1210S .

History: AFY18VI | AD142 | DMG26301 | KT501V | 2SD1366A | RT1N144S

Keywords - UN1121 transistor datasheet

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