UN1121 Datasheet. Specs and Replacement

Type Designator: UN1121  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: M-A1

  📄📄 Copy 

 UN1121 Substitution

- BJT ⓘ Cross-Reference Search

 

UN1121 datasheet

 ..1. Size:142K  panasonic

 un1121 un1122 un1123 un1124 un112x un112y.pdf pdf_icon

UN1121

Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y (UN1121/1122/1123/1124/112X/112Y) Silicon PNP epitaxial planer transistor Unit mm 2.5 0.1 For digital circuits 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 Costs can be reduced through downsizing of the equipment and R 0.7 reduction of the number of parts. M type package allowing easy automatic and manual ins... See More ⇒

Detailed specifications: UN1117S, UN1118, UN1119, UN111D, UN111E, UN111F, UN111H, UN111L, BC546, UN1122, UN1123, UN1124, UN112X, UN112Y, UN1210Q, UN1210R, UN1210S

Keywords - UN1121 pdf specs

 UN1121 cross reference

 UN1121 equivalent finder

 UN1121 pdf lookup

 UN1121 substitution

 UN1121 replacement