UN112X Datasheet, Equivalent, Cross Reference Search
Type Designator: UN112X
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 0.27 kOhm
Built in Bias Resistor R2 = 5 kOhm
Typical Resistor Ratio R1/R2 = 0.054
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: M-A1
UN112X Transistor Equivalent Substitute - Cross-Reference Search
UN112X Datasheet (PDF)
un1121 un1122 un1123 un1124 un112x un112y.pdf
Transistors with built-in ResistorUNR1121/1122/1123/1124/112X/112Y(UN1121/1122/1123/1124/112X/112Y)Silicon PNP epitaxial planer transistorUnit: mm2.50.1For digital circuits 6.90.1(1.0)(1.5)(1.5)Features R 0.9 Costs can be reduced through downsizing of the equipment andR 0.7reduction of the number of parts. M type package allowing easy automatic and manual ins
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
