UN112Y Datasheet. Specs and Replacement
Type Designator: UN112Y 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: M-A1
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UN112Y Substitution
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UN112Y datasheet
un1121 un1122 un1123 un1124 un112x un112y.pdf 
Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y (UN1121/1122/1123/1124/112X/112Y) Silicon PNP epitaxial planer transistor Unit mm 2.5 0.1 For digital circuits 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 Costs can be reduced through downsizing of the equipment and R 0.7 reduction of the number of parts. M type package allowing easy automatic and manual ins... See More ⇒
Detailed specifications: UN111F, UN111H, UN111L, UN1121, UN1122, UN1123, UN1124, UN112X, TIP31, UN1210Q, UN1210R, UN1210S, UN1211, UN1212, UN1213, UN1214, UN1215Q
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