UN112Y PDF Specs and Replacement
Type Designator: UN112Y
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: M-A1
UN112Y Substitution
UN112Y PDF detailed specifications
un1121 un1122 un1123 un1124 un112x un112y.pdf
Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y (UN1121/1122/1123/1124/112X/112Y) Silicon PNP epitaxial planer transistor Unit mm 2.5 0.1 For digital circuits 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 Costs can be reduced through downsizing of the equipment and R 0.7 reduction of the number of parts. M type package allowing easy automatic and manual ins... See More ⇒
Detailed specifications: UN111F , UN111H , UN111L , UN1121 , UN1122 , UN1123 , UN1124 , UN112X , TIP31 , UN1210Q , UN1210R , UN1210S , UN1211 , UN1212 , UN1213 , UN1214 , UN1215Q .
History: CSC2274F
Keywords - UN112Y pdf specs
UN112Y cross reference
UN112Y equivalent finder
UN112Y pdf lookup
UN112Y substitution
UN112Y replacement
