All Transistors. UN112Y Datasheet

 

UN112Y Datasheet and Replacement


   Type Designator: UN112Y
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 3.1 kOhm
   Built in Bias Resistor R2 = 4.6 kOhm
   Typical Resistor Ratio R1/R2 = 0.67
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: M-A1
 

 UN112Y Substitution

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UN112Y Datasheet (PDF)

 ..1. Size:142K  panasonic
 un1121 un1122 un1123 un1124 un112x un112y.pdf pdf_icon

UN112Y

Transistors with built-in ResistorUNR1121/1122/1123/1124/112X/112Y(UN1121/1122/1123/1124/112X/112Y)Silicon PNP epitaxial planer transistorUnit: mm2.50.1For digital circuits 6.90.1(1.0)(1.5)(1.5)Features R 0.9 Costs can be reduced through downsizing of the equipment andR 0.7reduction of the number of parts. M type package allowing easy automatic and manual ins

Datasheet: UN111F , UN111H , UN111L , UN1121 , UN1122 , UN1123 , UN1124 , UN112X , 2SD2499 , UN1210Q , UN1210R , UN1210S , UN1211 , UN1212 , UN1213 , UN1214 , UN1215Q .

History: CMLT5078E | NB322M

Keywords - UN112Y transistor datasheet

 UN112Y cross reference
 UN112Y equivalent finder
 UN112Y lookup
 UN112Y substitution
 UN112Y replacement

 

 
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