UN2123 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN2123
SMD Transistor Code: 7C
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
SC59
UN2123 Transistor Equivalent Substitute - Cross-Reference Search
UN2123 Datasheet (PDF)
un2121 un2122 un2123 un2124 un212x un212y.pdf
Transistors with built-in ResistorUN2121/2122/2123/2124/212X/212YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm+0.22.8 0.3Features +0.250.65 0.15 1.5 0.05 0.65 0.15Costs can be reduced through downsizing of the equipment andreduction of the number of parts. 1Mini type package, allowing downsizing of the equipment andautomatic insertion
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
