UN212X Datasheet and Replacement
Type Designator: UN212X
SMD Transistor Code: 7I
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 0.27 kOhm
Built in Bias Resistor R2 = 5 kOhm
Typical Resistor Ratio R1/R2 = 0.054
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT23 SC59
UN212X Substitution
UN212X Datasheet (PDF)
un2121 un2122 un2123 un2124 un212x un212y.pdf

Transistors with built-in ResistorUN2121/2122/2123/2124/212X/212YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm+0.22.8 0.3Features +0.250.65 0.15 1.5 0.05 0.65 0.15Costs can be reduced through downsizing of the equipment andreduction of the number of parts. 1Mini type package, allowing downsizing of the equipment andautomatic insertion
Datasheet: UN211N , UN211T , UN211V , UN211Z , UN2121 , UN2122 , UN2123 , UN2124 , TIP41 , UN212Y , UN2210Q , UN2210R , UN2210S , UN2211 , UN2212 , UN2213 , UN2214 .
History: HA5009
Keywords - UN212X transistor datasheet
UN212X cross reference
UN212X equivalent finder
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UN212X substitution
UN212X replacement
History: HA5009



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