UN411D Datasheet and Replacement
Type Designator: UN411D
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 4.7
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92S
UN411D Substitution
UN411D Datasheet (PDF)
un4110q un4110r un4110s un4111 un4112 un4113 un4114 un4115q un4115r un4115s un4116q un4116r un4116s un4117q un4117r un4117s.pdf

Transistors with built-in ResistorUN4111/4112/4113/4114/4115/4116/4117/4118/4119/4110/411D/411E/411F/411H/411LSilicon PNP epitaxial planer transistorUnit: mmFor digital circuits4.0 0.2FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.New S type package, allowing supply with the radial taping.markingResistance by Part N
Datasheet: UN4116Q , UN4116R , UN4116S , UN4117Q , UN4117R , UN4117S , UN4118 , UN4119 , 2SD313 , UN411E , UN411F , UN411H , UN411L , UN4121 , UN4122 , UN4123 , UN4124 .
History: 2SD2492
Keywords - UN411D transistor datasheet
UN411D cross reference
UN411D equivalent finder
UN411D lookup
UN411D substitution
UN411D replacement
History: 2SD2492



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