UN4123 Specs and Replacement
Type Designator: UN4123
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92S
UN4123 Transistor Equivalent Substitute - Cross-Reference Search
UN4123 detailed specifications
un4121 un4122 un4123 un4124 un412x un412y.pdf
Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit mm 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. Resistance by Part Number marking (R1)(R2) 1 2 3 UN4121 2.2k 2.2k ... See More ⇒
Detailed specifications: UN4119 , UN411D , UN411E , UN411F , UN411H , UN411L , UN4121 , UN4122 , 2N4401 , UN4124 , UN412X , UN412Y , UN4210Q , UN4210R , UN4210S , UN4211 , UN4212 .
Keywords - UN4123 transistor specs
UN4123 cross reference
UN4123 equivalent finder
UN4123 lookup
UN4123 substitution
UN4123 replacement
