UN412Y Datasheet. Specs and Replacement

Type Designator: UN412Y  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 3.1 kOhm

Built in Bias Resistor R2 = 4.6 kOhm

Typical Resistor Ratio R1/R2 = 0.67

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92S

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UN412Y datasheet

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UN412Y

Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit mm 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. Resistance by Part Number marking (R1)(R2) 1 2 3 UN4121 2.2k 2.2k ... See More ⇒

Detailed specifications: UN411F, UN411H, UN411L, UN4121, UN4122, UN4123, UN4124, UN412X, NJW0281G, UN4210Q, UN4210R, UN4210S, UN4211, UN4212, UN4213, UN4214, UN4215Q

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