UN412Y Datasheet, Equivalent, Cross Reference Search
Type Designator: UN412Y
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92S
UN412Y Transistor Equivalent Substitute - Cross-Reference Search
UN412Y Datasheet (PDF)
un4121 un4122 un4123 un4124 un412x un412y.pdf
Transistors with built-in ResistorUN4121/4122/4123/4124/412X/412YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm4.0 0.2FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.New S type package, allowing supply with the radial taping.Resistance by Part Numbermarking(R1)(R2) 1 2 3UN4121 2.2k 2.2k
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
