UN412Y Specs and Replacement
Type Designator: UN412Y
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92S
UN412Y Transistor Equivalent Substitute - Cross-Reference Search
UN412Y detailed specifications
un4121 un4122 un4123 un4124 un412x un412y.pdf
Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit mm 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. Resistance by Part Number marking (R1)(R2) 1 2 3 UN4121 2.2k 2.2k ... See More ⇒
Detailed specifications: UN411F , UN411H , UN411L , UN4121 , UN4122 , UN4123 , UN4124 , UN412X , NJW0281G , UN4210Q , UN4210R , UN4210S , UN4211 , UN4212 , UN4213 , UN4214 , UN4215Q .
History: 2SC5617
Keywords - UN412Y transistor specs
UN412Y cross reference
UN412Y equivalent finder
UN412Y lookup
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UN412Y replacement
History: 2SC5617
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