UN6116R Datasheet. Specs and Replacement
Type Designator: UN6116R 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 210
Package: MT-1
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UN6116R datasheet
Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor Unit mm For digital circuits 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 0.65 max. MT-1 type package, allowing supply... See More ⇒
Detailed specifications: UN6111, UN6112, UN6113, UN6114, UN6115Q, UN6115R, UN6115S, UN6116Q, 2SC4793, UN6116S, UN6117Q, UN6117R, UN6117S, UN6118, UN6119, UN611D, UN611E
Keywords - UN6116R pdf specs
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BJT Parameters and How They Relate
History: BLD132D | 2SB379A | UN9212 | ECG12 | HB857 | 2SB955K | MMUN2133LT1G
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