UN6123 Datasheet. Specs and Replacement

Type Designator: UN6123  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: MT-1

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UN6123 datasheet

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 un6121 un6122 un6123 un6124 un612x un612y.pdf pdf_icon

UN6123

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y Silicon PNP epitaxial planer transistor For digital circuits Unit mm 6.9 0.1 1.05 2.5 0.1 Features 0.05 (1.45) 0.7 4.0 0.8 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.65 max. Resistance by Part N... See More ⇒

Detailed specifications: UN6119, UN611D, UN611E, UN611F, UN611H, UN611L, UN6121, UN6122, 2SD313, UN6124, UN612X, UN612Y, UN6210Q, UN6210R, UN6210S, UN6211, UN6212

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