UN6123 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN6123
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MT-1
UN6123 Transistor Equivalent Substitute - Cross-Reference Search
UN6123 Datasheet (PDF)
un6121 un6122 un6123 un6124 un612x un612y.pdf
Transistors with built-in ResistorUN6121/6122/6123/6124/612X/612YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm6.9 0.1 1.05 2.5 0.1Features 0.05 (1.45)0.7 4.00.8Costs can be reduced through downsizing of the equipment andreduction of the number of parts.MT-1 type package, allowing supply with the radial taping.0.65 max.Resistance by Part N
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
