UN612Y Datasheet, Equivalent, Cross Reference Search
Type Designator: UN612Y
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: MT-1
UN612Y Transistor Equivalent Substitute - Cross-Reference Search
UN612Y Datasheet (PDF)
un6121 un6122 un6123 un6124 un612x un612y.pdf
Transistors with built-in ResistorUN6121/6122/6123/6124/612X/612YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm6.9 0.1 1.05 2.5 0.1Features 0.05 (1.45)0.7 4.00.8Costs can be reduced through downsizing of the equipment andreduction of the number of parts.MT-1 type package, allowing supply with the radial taping.0.65 max.Resistance by Part N
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
