UN612Y Datasheet and Replacement
Type Designator: UN612Y
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: MT-1
UN612Y Transistor Equivalent Substitute - Cross-Reference Search
UN612Y Datasheet (PDF)
un6121 un6122 un6123 un6124 un612x un612y.pdf
Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y Silicon PNP epitaxial planer transistor For digital circuits Unit mm 6.9 0.1 1.05 2.5 0.1 Features 0.05 (1.45) 0.7 4.0 0.8 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.65 max. Resistance by Part N... See More ⇒
Datasheet: UN611F , UN611H , UN611L , UN6121 , UN6122 , UN6123 , UN6124 , UN612X , SS8050 , UN6210Q , UN6210R , UN6210S , UN6211 , UN6212 , UN6213 , UN6214 , UN6215Q .
History: ISA1235AC1 | CD952
Keywords - UN612Y transistor datasheet
UN612Y cross reference
UN612Y equivalent finder
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History: ISA1235AC1 | CD952
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