2N536 Datasheet and Replacement
Type Designator: 2N536
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.085 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO23
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2N536 Datasheet (PDF)
2n5366.pdf

2N5366PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3825 | 2N3682 | 2N1265-5 | 2N5828A | 2N5695 | BSY40 | 2N459
Keywords - 2N536 transistor datasheet
2N536 cross reference
2N536 equivalent finder
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History: 2N3825 | 2N3682 | 2N1265-5 | 2N5828A | 2N5695 | BSY40 | 2N459



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