2N536 Specs and Replacement
Type Designator: 2N536
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.085 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO23
2N536 Substitution
- BJT ⓘ Cross-Reference Search
2N536 datasheet
2N5366 PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base ... See More ⇒
Detailed specifications: 2N5350, 2N5351, 2N5354, 2N5355, 2N5356, 2N5357, 2N535A, 2N535B, S8050, 2N5365, 2N5366, 2N5367, 2N5368, 2N5369, 2N537, 2N5370, 2N5371
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