2N536 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N536
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.085 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO23

2N536 Transistor Equivalent Substitute - Cross-Reference Search

2N536 Datasheet (PDF)

0.1. Size:60K fairchild semi
2n5366.pdf

2N5366PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base

0.2. Size:218K no
2n5365.pdf