UN911E Datasheet. Specs and Replacement
Type Designator: UN911E 📄📄
SMD Transistor Code: 6N
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SS-MINI
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UN911E datasheet
Transistors with built-in Resistor UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Silicon PNP epitaxial planer transistor Unit mm For digital circuits 1.6 0.15 0.4 0.8 0.1 0.4 Features 1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 3 SS-Mini type package, allowing automatic in... See More ⇒
Detailed specifications: UN9117R, UN9117S, UN9118, UN9119, UN911AJ, UN911BJ, UN911CJ, UN911D, 2N2222, UN911F, UN911H, UN911L, UN921N, UN9210Q, UN9210R, UN9210S, UN9211
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BJT Parameters and How They Relate
History: US6X7 | UN6110Q | 2SB231 | STC03DE170HP | 2SC3529 | ECG107 | MMUN2232LT1
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