V221 Specs and Replacement
Type Designator: V221
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO72
V221 Substitution
- BJT ⓘ Cross-Reference Search
V221 datasheet
Doc No. TT4-EA-14832 Revision. 1 Product Standards MOS FET FC8V22150L FC8V22150L Gate resistor installed Dual N-channel MOS FET Unit mm 2.9 For lithium-ion secondary battery protection circuits 0.3 0.16 8 7 6 5 Features Low drain-source ON resistance Rds(on) typ. = 9.0 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0... See More ⇒
Detailed specifications: UPTB520, UPTB530, UPTB540, UPTB550, V118, V129, V152A, V162A, BC547B, V405A, V405AL, V410A, V435, V741, V765, W21, WT4301-06
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