XB112 Datasheet and Replacement
Type Designator: XB112
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.09 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Max. Operating Junction Temperature (Tj): 55 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO1
XB112 Substitution
XB112 Datasheet (PDF)
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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1015LT1
Keywords - XB112 transistor datasheet
XB112 cross reference
XB112 equivalent finder
XB112 lookup
XB112 substitution
XB112 replacement
History: 2SA1015LT1



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