All Transistors. ZT60 Datasheet

 

ZT60 Datasheet and Replacement


   Type Designator: ZT60
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 38
   Noise Figure, dB: -
   Package: TO5
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ZT60 Datasheet (PDF)

 0.1. Size:81K  fairchild semi
 nzt605.pdf pdf_icon

ZT60

January 2007NZT605NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06.4321 SOT-2231. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 110 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: W21 | R8066 | ECG95 | 2SD1376 | C8050C | SS219 | 3DA150C

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