All Transistors. ZT60 Datasheet

 

ZT60 Datasheet, Equivalent, Cross Reference Search

Type Designator: ZT60

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 38

Noise Figure, dB: -

Package: TO5

ZT60 Transistor Equivalent Substitute - Cross-Reference Search

 

ZT60 Datasheet (PDF)

1.1. nzt605.pdf Size:81K _fairchild_semi

ZT60
ZT60

January 2007 NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 110 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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