ZT60 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

ZT60 Specs and Replacement

Type Designator: ZT60

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 38

Noise Figure, dB: -

Package: TO5

ZT60 Substitution

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ZT60 datasheet

0.1. Size:81K fairchild semi

nzt605.pdf pdf_icon

January 2007 NZT605 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 110 V... See More ⇒

Detailed specifications: ZT403, ZT403P, ZT404, ZT404P, ZT41, ZT42, ZT43, ZT44, 8050, ZT600, ZT61, ZT62, ZT63, ZT64, ZT66, ZT67, ZT68