2N539 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N539
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 34 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 28 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO10
2N539 Transistor Equivalent Substitute - Cross-Reference Search
2N539 Datasheet (PDF)
0.1. 2n5397 2n5398.pdf 
Size:91K _interfet
Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW Mixer
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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