2N539 PDF and Equivalents Search

 

2N539 Specs and Replacement

Type Designator: 2N539

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 34 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 28 V

Maximum Collector Current |Ic max|: 3.5 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO10

 2N539 Substitution

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2N539 datasheet

 0.1. Size:91K  interfet

 2n5397 2n5398.pdf pdf_icon

2N539

Databook.fxp 1/13/99 2 09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low-Noise Reverse Gate Source & Reverse Gate Drain Voltage 25 V High Power Gain Drain Source Voltage 25 V High Transconductance Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Mixer... See More ⇒

Detailed specifications: 2N5384 , 2N5385 , 2N5386 , 2N5387 , 2N5388 , 2N5389 , 2N538A , 2N538M , BC546 , 2N5390 , 2N5399 , 2N539A , 2N54 , 2N540 , 2N5400 , 2N5401 , 2N5404 .

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