All Transistors. 2N539 Datasheet

 

2N539 Datasheet and Replacement


   Type Designator: 2N539
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 34 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 28 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO10
 
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2N539 Datasheet (PDF)

 0.1. Size:91K  interfet
 2n5397 2n5398.pdf pdf_icon

2N539

Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW Mixer

Datasheet: 2N5384 , 2N5385 , 2N5386 , 2N5387 , 2N5388 , 2N5389 , 2N538A , 2N538M , 8050 , 2N5390 , 2N5399 , 2N539A , 2N54 , 2N540 , 2N5400 , 2N5401 , 2N5404 .

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