2N539 Datasheet and Replacement
Type Designator: 2N539
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 34 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 28 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO10
2N539 Substitution
2N539 Datasheet (PDF)
2n5397 2n5398.pdf

Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW Mixer
Datasheet: 2N5384 , 2N5385 , 2N5386 , 2N5387 , 2N5388 , 2N5389 , 2N538A , 2N538M , 8050 , 2N5390 , 2N5399 , 2N539A , 2N54 , 2N540 , 2N5400 , 2N5401 , 2N5404 .
History: 2N6475 | 2N4307 | EMG2
Keywords - 2N539 transistor datasheet
2N539 cross reference
2N539 equivalent finder
2N539 lookup
2N539 substitution
2N539 replacement
History: 2N6475 | 2N4307 | EMG2



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