2N539A Specs and Replacement
Type Designator: 2N539A
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 34 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 28 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO10
2N539A Substitution
- BJT ⓘ Cross-Reference Search
2N539A datasheet
Databook.fxp 1/13/99 2 09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low-Noise Reverse Gate Source & Reverse Gate Drain Voltage 25 V High Power Gain Drain Source Voltage 25 V High Transconductance Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Mixer... See More ⇒
Detailed specifications: 2N5387, 2N5388, 2N5389, 2N538A, 2N538M, 2N539, 2N5390, 2N5399, 8050, 2N54, 2N540, 2N5400, 2N5401, 2N5404, 2N5405, 2N5406, 2N5407
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