All Transistors. ZTX614 Datasheet


ZTX614 Datasheet, Equivalent, Cross Reference Search

Type Designator: ZTX614

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 20000

Noise Figure, dB: -

Package: TO92

ZTX614 Transistor Equivalent Substitute - Cross-Reference Search


ZTX614 Datasheet (PDF)

0.1. ztx614.pdf Size:40K _fairchild_semi


ZTX614NPN Darlington Transistor These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. Sourced from process 06.CTO-226BEAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 120 VVEBO Emitter-Base

9.1. ztx618.pdf Size:153K _diodes


NPN SILICON PLANAR MEDIUM POWERZTX618HIGH GAIN TRANSISTORISSUE 2 JULY 1995 T I II i i I IT I I i I V I I TI T i i i i E-Line I T 8TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I i I Di i i Di i i i T T T D i i I I i i ed, applied orpply of anyZTX618ELECTRICAL CHARACT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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