ZTX614 Datasheet, Equivalent, Cross Reference Search
Type Designator: ZTX614
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: TO92
ZTX614 Transistor Equivalent Substitute - Cross-Reference Search
ZTX614 Datasheet (PDF)
ztx614.pdf
ZTX614NPN Darlington Transistor These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. Sourced from process 06.CTO-226BEAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 120 VVEBO Emitter-Base
ztx618.pdf
NPN SILICON PLANAR MEDIUM POWERZTX618HIGH GAIN TRANSISTORISSUE 2 JULY 1995 T I II i i I IT I I i I V I I TI T i i i i E-Line I T 8TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I i I Di i i Di i i i T T T D i i I I i i ed, applied orpply of anyZTX618ELECTRICAL CHARACT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2906E
