ZTX712 Datasheet, Equivalent, Cross Reference Search
Type Designator: ZTX712
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 12000
Noise Figure, dB: -
Package: TO92
ZTX712 Transistor Equivalent Substitute - Cross-Reference Search
ZTX712 Datasheet (PDF)
9.1. Size:90K diodes
ztx718.pdf
ztx718.pdf
PNP SILICON PLANAR MEDIUM POWERZTX718HIGH GAIN TRANSISTORISSUE 4 MAY 1998FEATURES* 6A Peak pulse current* Excellent hFE characteristics up to 6A (pulsed)* low saturation voltage * IC Cont 2.5ACAPPLICATIONS B E* Power MOSFET gate driver in conjunction with E-Linecomplementary ZTX618TO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollect
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
