ZTX712 Specs and Replacement
Type Designator: ZTX712
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 12000
Package: TO92
ZTX712 Substitution
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ZTX712 datasheet
PNP SILICON PLANAR MEDIUM POWER ZTX718 HIGH GAIN TRANSISTOR ISSUE 4 MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.5A C APPLICATIONS B E * Power MOSFET gate driver in conjunction with E-Line complementary ZTX618 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collect... See More ⇒
Detailed specifications: ZTX688B, ZTX689B, ZTX690B, ZTX692B, ZTX694B, ZTX696B, ZTX704, ZTX705, 2SC1815, ZTX749, ZTX750, ZTX751, ZTX752, ZTX753, ZTX754, ZTX755, ZTX756
Keywords - ZTX712 pdf specs
ZTX712 cross reference
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