BCV63 Specs and Replacement
Type Designator: BCV63
SMD Transistor Code: D95
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Package: SOT143B
BCV63 Substitution
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BCV63 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV63; BCV63B NPN general purpose double transistors 1999 May 21 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN general purpose double transistors BCV63; BCV63B FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 and 6 V). 1 collector TR2 and base ... See More ⇒
BCV63; BCV63B NPN general-purpose double transistors Rev. 4 4 August 2010 Product data sheet 1. Product profile 1.1 General description NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEITA BCV63 SOT143B - - BCV63B BCV64B 1.2 Features and benefits Low cu... See More ⇒
Detailed specifications: 2PB709A, 2PB710A, 2PC4081, 2PC4617, 2PC4617J, 2PC945, 2PD1820A, BCV63B, TIP142, BCV64B, BCV65, BDL31, BDL32, BDP31, BDP32, BFE505, BFE520
Keywords - BCV63 pdf specs
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