All Transistors. BDP32 Datasheet

 

BDP32 Datasheet and Replacement


   Type Designator: BDP32
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.35 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT223
 

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BDP32 Datasheet (PDF)

 ..1. Size:49K  philips
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BDP32

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BDP32PNP medium power transistor1999 Apr 23Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationPNP medium power transistor BDP32FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 45 V).1 base2,4 collectorAPPLICATIONS3 emitter

Datasheet: 2PD1820A , BCV63B , BCV63 , BCV64B , BCV65 , BDL31 , BDL32 , BDP31 , 2SC1740 , BFE505 , BFE520 , BFG10 , BFG10W-X , BFG11 , BFG11-X , BFG11W-X , BFG21W .

History: FMMT1893 | DCX143EH | FJNS4212R | H9012 | RT1P432M | 2SA1464-Q | 2SA2048

Keywords - BDP32 transistor datasheet

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