BDP32 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDP32
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.35 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT223
BDP32 Transistor Equivalent Substitute - Cross-Reference Search
BDP32 Datasheet (PDF)
..1. Size:49K philips
bdp32 3.pdf
bdp32 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BDP32PNP medium power transistor1999 Apr 23Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationPNP medium power transistor BDP32FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 45 V).1 base2,4 collectorAPPLICATIONS3 emitter
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
