BDP32 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDP32 Specs and Replacement

Type Designator: BDP32

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.35 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT223

BDP32 Substitution

- BJT ⓘ Cross-Reference Search

BDP32 datasheet

..1. Size:49K philips

bdp32 3.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BDP32 PNP medium power transistor 1999 Apr 23 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification PNP medium power transistor BDP32 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2,4 collector APPLICATIONS 3 emitter ... See More ⇒

Detailed specifications: 2PD1820A, BCV63B, BCV63, BCV64B, BCV65, BDL31, BDL32, BDP31, TIP32C, BFE505, BFE520, BFG10, BFG10W-X, BFG11, BFG11-X, BFG11W-X, BFG21W