All Transistors. BFE505 Datasheet

 

BFE505 Datasheet and Replacement


   Type Designator: BFE505
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.018 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT353
 

 BFE505 Substitution

   - BJT ⓘ Cross-Reference Search

   

BFE505 Datasheet (PDF)

 ..1. Size:42K  philips
 bfe505 2.pdf pdf_icon

BFE505

DISCRETE SEMICONDUCTORSDATA SHEETBFE505NPN wideband differentialtransistor1996 Oct 08Product specificationSupersedes data of 1995 Sep 04File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN wideband differential transistor BFE505FEATURES PINNING - SOT353B Small sizeSYMBOL PIN DESCRIPTION High power gain at low bias current and

Datasheet: BCV63B , BCV63 , BCV64B , BCV65 , BDL31 , BDL32 , BDP31 , BDP32 , 2SC5198 , BFE520 , BFG10 , BFG10W-X , BFG11 , BFG11-X , BFG11W-X , BFG21W , 2SB1366F-O .

History: 2SC3457 | BCP5316 | OC41 | 2SC3045 | FC120 | 15C02MH

Keywords - BFE505 transistor datasheet

 BFE505 cross reference
 BFE505 equivalent finder
 BFE505 lookup
 BFE505 substitution
 BFE505 replacement

 

 
Back to Top

 


 
.