BFE505 Specs and Replacement

Type Designator: BFE505

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 8 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.018 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT353

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BFE505 datasheet

 ..1. Size:42K  philips

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BFE505

DISCRETE SEMICONDUCTORS DATA SHEET BFE505 NPN wideband differential transistor 1996 Oct 08 Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN wideband differential transistor BFE505 FEATURES PINNING - SOT353B Small size SYMBOL PIN DESCRIPTION High power gain at low bias current and... See More ⇒

Detailed specifications: BCV63B, BCV63, BCV64B, BCV65, BDL31, BDL32, BDP31, BDP32, MJE350, BFE520, BFG10, BFG10W-X, BFG11, BFG11-X, BFG11W-X, BFG21W, 2SB1366F-O

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