BFG11-X Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG11-X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT143
BFG11-X Transistor Equivalent Substitute - Cross-Reference Search
BFG11-X Datasheet (PDF)
bfg11wx.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG11W/XNPN 2 GHz power transistor1996 Jun 04Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz power transistor BFG11W/XFEATURES PINNING - SOT343 High power gainPIN DESCRIPTION High efficiency1 collector Small size discrete po
bfg11 bfg11x 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG11; BFG11/XNPN 2 GHz RF power transistor1995 Apr 07Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG11; BFG11/XFEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors e
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
