All Transistors. BFG11-X Datasheet

 

BFG11-X Datasheet and Replacement


   Type Designator: BFG11-X
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT143
 

 BFG11-X Substitution

   - BJT ⓘ Cross-Reference Search

   

BFG11-X Datasheet (PDF)

 9.1. Size:79K  philips
 bfg11wx.pdf pdf_icon

BFG11-X

DISCRETE SEMICONDUCTORSDATA SHEETBFG11W/XNPN 2 GHz power transistor1996 Jun 04Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz power transistor BFG11W/XFEATURES PINNING - SOT343 High power gainPIN DESCRIPTION High efficiency1 collector Small size discrete po

 9.2. Size:62K  philips
 bfg11 bfg11x 3.pdf pdf_icon

BFG11-X

DISCRETE SEMICONDUCTORSDATA SHEETBFG11; BFG11/XNPN 2 GHz RF power transistor1995 Apr 07Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG11; BFG11/XFEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors e

Datasheet: BDL32 , BDP31 , BDP32 , BFE505 , BFE520 , BFG10 , BFG10W-X , BFG11 , 2N2907 , BFG11W-X , BFG21W , 2SB1366F-O , BFG31 , BFG403W , BFG425W , BFG505 , BFG505W .

Keywords - BFG11-X transistor datasheet

 BFG11-X cross reference
 BFG11-X equivalent finder
 BFG11-X lookup
 BFG11-X substitution
 BFG11-X replacement

 

 
Back to Top

 


 
.