BFG11-X pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BFG11-X Specs and Replacement

Type Designator: BFG11-X

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 8 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT143

BFG11-X Substitution

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BFG11-X datasheet

9.1. Size:79K philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor 1996 Jun 04 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X FEATURES PINNING - SOT343 High power gain PIN DESCRIPTION High efficiency 1 collector Small size discrete po... See More ⇒

9.2. Size:62K philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor 1995 Apr 07 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors e... See More ⇒

Detailed specifications: BDL32, BDP31, BDP32, BFE505, BFE520, BFG10, BFG10W-X, BFG11, A42, BFG11W-X, BFG21W, 2SB1366F-O, BFG31, BFG403W, BFG425W, BFG505, BFG505W