All Transistors. BFG11W-X Datasheet

 

BFG11W-X Datasheet and Replacement


   Type Designator: BFG11W-X
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.76 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT343
 

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BFG11W-X Datasheet (PDF)

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BFG11W-X

DISCRETE SEMICONDUCTORSDATA SHEETBFG11W/XNPN 2 GHz power transistor1996 Jun 04Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz power transistor BFG11W/XFEATURES PINNING - SOT343 High power gainPIN DESCRIPTION High efficiency1 collector Small size discrete po

 9.1. Size:62K  philips
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BFG11W-X

DISCRETE SEMICONDUCTORSDATA SHEETBFG11; BFG11/XNPN 2 GHz RF power transistor1995 Apr 07Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG11; BFG11/XFEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors e

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BDX33 | MMBT4964 | MP2139 | 2SC785 | 2SC519A | 2SC3345Y | BDW93

Keywords - BFG11W-X transistor datasheet

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