BFG11W-X Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG11W-X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.76 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT343
BFG11W-X Transistor Equivalent Substitute - Cross-Reference Search
BFG11W-X Datasheet (PDF)
bfg11wx.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG11W/XNPN 2 GHz power transistor1996 Jun 04Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz power transistor BFG11W/XFEATURES PINNING - SOT343 High power gainPIN DESCRIPTION High efficiency1 collector Small size discrete po
bfg11 bfg11x 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG11; BFG11/XNPN 2 GHz RF power transistor1995 Apr 07Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG11; BFG11/XFEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors e
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
