All Transistors. BFG11W-X Datasheet

 

BFG11W-X Datasheet and Replacement


   Type Designator: BFG11W-X
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.76 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT343
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BFG11W-X Datasheet (PDF)

 8.1. Size:79K  philips
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BFG11W-X

DISCRETE SEMICONDUCTORSDATA SHEETBFG11W/XNPN 2 GHz power transistor1996 Jun 04Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz power transistor BFG11W/XFEATURES PINNING - SOT343 High power gainPIN DESCRIPTION High efficiency1 collector Small size discrete po

 9.1. Size:62K  philips
 bfg11 bfg11x 3.pdf pdf_icon

BFG11W-X

DISCRETE SEMICONDUCTORSDATA SHEETBFG11; BFG11/XNPN 2 GHz RF power transistor1995 Apr 07Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG11; BFG11/XFEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors e

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Keywords - BFG11W-X transistor datasheet

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