BFM505 Specs and Replacement
Type Designator: BFM505
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.018 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.31 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT363
BFM505 Substitution
- BJT ⓘ Cross-Reference Search
BFM505 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFM505 Dual NPN wideband transistor 1996 Oct 08 Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 FEATURES PINNING - SOT363A Small size PIN SYMBOL DESCRIPTION Temperature and hFE matched 1 b1 base 1 Low noise ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFM505 Dual NPN wideband transistor Product specification 1996 Oct 08 Supersedes data of 1995 Sep 04 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 FEATURES PINNING - SOT363A Small size PIN SYMBOL DESCRIPTION Temperature and hFE matched 1 b1 base 1 Low noise and high gain 2 e1 emitter 1 High gain ... See More ⇒
Detailed specifications: BFG505, BFG505W, BFG520, BFG520W, BFG590, BFG590W, BFG591, BFG480W, 2N3055, BFM520, BFQ131, BFQ151, BFQ166, BFQ256, BFQ256A, BFR520, BFR520T
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