BLT61 Datasheet. Specs and Replacement

Type Designator: BLT61  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 4 W

Maximum Collector-Base Voltage |Vcb|: 14 V

Maximum Collector-Emitter Voltage |Vce|: 7 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: SOT96-1

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BLT61 datasheet

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BLT61

DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor 1998 Jan 28 Preliminary specification Supersedes data of 1996 Feb 05 Philips Semiconductors Preliminary specification UHF power transistor BLT61 FEATURES PINNING High efficiency PIN DESCRIPTION High gain 1, 8 base Internal pre-matched input 2, 4, 5, 7 emitter Low supply voltage. 3, 6 collecto... See More ⇒

Detailed specifications: BLS2731-50, BLS3135-10, BLS3135-20, BLS3135-50, BLS3135-65, BLT13, BLT52, BLT53, 2SC2073, BLT70, BLT71-8, BLT81, BLT82, BLT94, BLU11-SL, BLU56, BLU86

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