BLT81 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT81
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 9.5 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 2.7 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT223
BLT81 Transistor Equivalent Substitute - Cross-Reference Search
BLT81 Datasheet (PDF)
..1. Size:81K philips
blt81.pdf
blt81.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLT81UHF power transistor1996 May 09Product specificationSupersedes data of November 1992Philips Semiconductors Product specificationUHF power transistor BLT81FEATURES SMD encapsulation Gold metallization ensures excellent reliability.handbook, halfpage4APPLICATIONSc Hand-held radio equipment in the 900 MHzcommunicatio
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
