BLT81 Datasheet. Specs and Replacement

Type Designator: BLT81  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 9.5 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.7 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT223

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BLT81 datasheet

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BLT81

DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor 1996 May 09 Product specification Supersedes data of November 1992 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES SMD encapsulation Gold metallization ensures excellent reliability. handbook, halfpage 4 APPLICATIONS c Hand-held radio equipment in the 900 MHz communicatio... See More ⇒

Detailed specifications: BLS3135-50, BLS3135-65, BLT13, BLT52, BLT53, BLT61, BLT70, BLT71-8, A733, BLT82, BLT94, BLU11-SL, BLU56, BLU86, BLV12, BLV193, BLV194

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