BLV12 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV12
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1600 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT123A
BLV12 Transistor Equivalent Substitute - Cross-Reference Search
BLV12 Datasheet (PDF)
..1. Size:72K philips
blv12.pdf
blv12.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV12VHF power transistorSeptember 1991Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV12FEATURES QUICK REFERENCE DATARF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profilef VCE PL GP CMODE OF OPERATION Excellent
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
