All Transistors. BLV12 Datasheet

 

BLV12 Datasheet and Replacement


   Type Designator: BLV12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1600 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT123A
 

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BLV12 Datasheet (PDF)

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BLV12

DISCRETE SEMICONDUCTORSDATA SHEETBLV12VHF power transistorSeptember 1991Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV12FEATURES QUICK REFERENCE DATARF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profilef VCE PL GP CMODE OF OPERATION Excellent

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC161 | R9006 | HUN5111 | HSD669AT | 2N976 | HSE402 | HSE191

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