All Transistors. BLV12 Datasheet

 

BLV12 Datasheet and Replacement


   Type Designator: BLV12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1600 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT123A
 

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BLV12 Datasheet (PDF)

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BLV12

DISCRETE SEMICONDUCTORSDATA SHEETBLV12VHF power transistorSeptember 1991Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV12FEATURES QUICK REFERENCE DATARF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profilef VCE PL GP CMODE OF OPERATION Excellent

Datasheet: BLT70 , BLT71-8 , BLT81 , BLT82 , BLT94 , BLU11-SL , BLU56 , BLU86 , B772 , BLV193 , BLV194 , BLV58 , BLV857 , BLV859 , BLV861 , BLV862 , BLV897 .

History: NPS3565 | GES3499 | 2SC5018 | NB012HV | BDX69C | BC160 | BC161

Keywords - BLV12 transistor datasheet

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