BLV12 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BLV12 Specs and Replacement

Type Designator: BLV12

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1600 MHz

Collector Capacitance (Cc): 90 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT123A

BLV12 Substitution

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BLV12 datasheet

..1. Size:72K philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor September 1991 Product specification Philips Semiconductors Product specification VHF power transistor BLV12 FEATURES QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for an optimum temperature profile f VCE PL GP C MODE OF OPERATION Excellent ... See More ⇒

Detailed specifications: BLT70, BLT71-8, BLT81, BLT82, BLT94, BLU11-SL, BLU56, BLU86, A940, BLV193, BLV194, BLV58, BLV857, BLV859, BLV861, BLV862, BLV897