All Transistors. BLV193 Datasheet

 

BLV193 Datasheet and Replacement


   Type Designator: BLV193
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 44 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 24.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT171A
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BLV193 Datasheet (PDF)

 ..1. Size:84K  philips
 blv193.pdf pdf_icon

BLV193

DISCRETE SEMICONDUCTORSDATA SHEETBLV193UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV193FEATURES QUICK REFERENCE DATARF performance at Th = 25 C in a common emitter test circuit. Emitter ballasting resistors for anoptimum temperature profiledimMODE OF f VCE PL Gp C Gold metallization

 9.1. Size:70K  philips
 blv194.pdf pdf_icon

BLV193

DISCRETE SEMICONDUCTORSDATA SHEETBLV194UHF power transistorJanuary 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV194FEATURES QUICK REFERENCE DATARF performance at Th = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profileMODE OF f VCE PL Gp C Gold metallization ens

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2134 | KSD1021Y | AF135 | NSS1C301E | BC846F | ED1701K | ESM3004

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