BLV193 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BLV193 Specs and Replacement

Type Designator: BLV193

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 44 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 3.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 24.5 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT171A

BLV193 Substitution

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BLV193 datasheet

..1. Size:84K philips

blv193.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV193 FEATURES QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. Emitter ballasting resistors for an optimum temperature profile dim MODE OF f VCE PL Gp C Gold metallization ... See More ⇒

9.1. Size:70K philips

blv194.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor January 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV194 FEATURES QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. Emitter-ballasting resistors for an optimum temperature profile MODE OF f VCE PL Gp C Gold metallization ens... See More ⇒

Detailed specifications: BLT71-8, BLT81, BLT82, BLT94, BLU11-SL, BLU56, BLU86, BLV12, B772, BLV194, BLV58, BLV857, BLV859, BLV861, BLV862, BLV897, BLW30