BLV193 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV193
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 44 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 24.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT171A
BLV193 Transistor Equivalent Substitute - Cross-Reference Search
BLV193 Datasheet (PDF)
blv193.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV193UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV193FEATURES QUICK REFERENCE DATARF performance at Th = 25 C in a common emitter test circuit. Emitter ballasting resistors for anoptimum temperature profiledimMODE OF f VCE PL Gp C Gold metallization
blv194.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV194UHF power transistorJanuary 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV194FEATURES QUICK REFERENCE DATARF performance at Th = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profileMODE OF f VCE PL Gp C Gold metallization ens
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
