BLV194 Specs and Replacement
Type Designator: BLV194
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 46 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT171A
BLV194 Substitution
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BLV194 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor January 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV194 FEATURES QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. Emitter-ballasting resistors for an optimum temperature profile MODE OF f VCE PL Gp C Gold metallization ens... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV193 FEATURES QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. Emitter ballasting resistors for an optimum temperature profile dim MODE OF f VCE PL Gp C Gold metallization ... See More ⇒
Detailed specifications: BLT81, BLT82, BLT94, BLU11-SL, BLU56, BLU86, BLV12, BLV193, 2SA1837, BLV58, BLV857, BLV859, BLV861, BLV862, BLV897, BLW30, BLW97
Keywords - BLV194 pdf specs
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