BLV194 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV194
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 46 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT171A
BLV194 Transistor Equivalent Substitute - Cross-Reference Search
BLV194 Datasheet (PDF)
blv194.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV194UHF power transistorJanuary 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV194FEATURES QUICK REFERENCE DATARF performance at Th = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profileMODE OF f VCE PL Gp C Gold metallization ens
blv193.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV193UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV193FEATURES QUICK REFERENCE DATARF performance at Th = 25 C in a common emitter test circuit. Emitter ballasting resistors for anoptimum temperature profiledimMODE OF f VCE PL Gp C Gold metallization
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
