BLV859 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV859
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 145 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 36 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT262B
BLV859 Transistor Equivalent Substitute - Cross-Reference Search
BLV859 Datasheet (PDF)
blv859.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV859UHF linear push-pull powertransistor1996 Jul 26Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV859FEATURES PINNING SOT262B Double internal input and output matching for anPIN SYMBOL DESCRIPTIONoptimum wideband capability and high gain1 c1
blv857.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV857UHF linear push-pull powertransistor1997 Jan 16Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV857FEATURES PINNING SOT324B Internal input matching for an optimum widebandPIN SYMBOL DESCRIPTIONcapability and high gain1 c1 collector 1
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SD615
