BLV859 Specs and Replacement
Type Designator: BLV859
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 145 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 36 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT262B
BLV859 Substitution
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BLV859 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor 1996 Jul 26 Product specification Supersedes data of 1995 Oct 04 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 FEATURES PINNING SOT262B Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideband capability and high gain 1 c1... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor 1997 Jan 16 Product specification Supersedes data of 1995 Oct 04 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 FEATURES PINNING SOT324B Internal input matching for an optimum wideband PIN SYMBOL DESCRIPTION capability and high gain 1 c1 collector 1 ... See More ⇒
Detailed specifications: BLU11-SL , BLU56 , BLU86 , BLV12 , BLV193 , BLV194 , BLV58 , BLV857 , BD135 , BLV861 , BLV862 , BLV897 , BLW30 , BLW97 , BRY39 , BRY56 , BRY56A .
Keywords - BLV859 pdf specs
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