All Transistors. BLV859 Datasheet

 

BLV859 Datasheet and Replacement


   Type Designator: BLV859
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 145 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 28 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 36 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT262B
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BLV859 Datasheet (PDF)

 ..1. Size:98K  philips
 blv859.pdf pdf_icon

BLV859

DISCRETE SEMICONDUCTORSDATA SHEETBLV859UHF linear push-pull powertransistor1996 Jul 26Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV859FEATURES PINNING SOT262B Double internal input and output matching for anPIN SYMBOL DESCRIPTIONoptimum wideband capability and high gain1 c1

 9.1. Size:106K  philips
 blv857.pdf pdf_icon

BLV859

DISCRETE SEMICONDUCTORSDATA SHEETBLV857UHF linear push-pull powertransistor1997 Jan 16Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV857FEATURES PINNING SOT324B Internal input matching for an optimum widebandPIN SYMBOL DESCRIPTIONcapability and high gain1 c1 collector 1

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUL49D | 3DD128F_H6D | BD612 | RN2425 | TN2894 | 2SD991K | BLX20

Keywords - BLV859 transistor datasheet

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