BLV862 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV862
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT262B
BLV862 Transistor Equivalent Substitute - Cross-Reference Search
BLV862 Datasheet (PDF)
blv862.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLV862UHF linear push-pull powertransistor1999 Jun 25Product specificationSupersedes data of 1997 Oct 14Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV862FEATURES PINNING Double stage internal input and output matchingPIN SYMBOL DESCRIPTIONnetworks for an optimum wideband capability and
blv861.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D099BLV861UHF linear push-pull powertransistor1998 Jan 16Product specificationSupersedes data of 1998 Jan 14Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV861FEATURES PINNING Double stage internal input and output matchingPIN SYMBOL DESCRIPTIONnetworks for an optimum wideband
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
