All Transistors. BLW30 Datasheet

 

BLW30 Datasheet and Replacement


   Type Designator: BLW30
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1600 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT120A
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BLW30 Datasheet (PDF)

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BLW30

DISCRETE SEMICONDUCTORSDATA SHEETBLW30VHF power transistorSeptember 1991Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW30FEATURES QUICK REFERENCE DATARF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profileMODE OF f VCE PL GP C Excellent reliability

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KRC159F | 153NU70 | PMD13K100 | 2C2907A | BLX71 | BLX33 | KRC885T

Keywords - BLW30 transistor datasheet

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