BLW30 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BLW30 Specs and Replacement

Type Designator: BLW30

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1600 MHz

Collector Capacitance (Cc): 90 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT120A

BLW30 Substitution

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BLW30 datasheet

..1. Size:72K philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLW30 VHF power transistor September 1991 Product specification Philips Semiconductors Product specification VHF power transistor BLW30 FEATURES QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for an optimum temperature profile MODE OF f VCE PL GP C Excellent reliability... See More ⇒

Detailed specifications: BLV193 , BLV194 , BLV58 , BLV857 , BLV859 , BLV861 , BLV862 , BLV897 , TIP127 , BLW97 , BRY39 , BRY56 , BRY56A , BRY61 , BRY62 , BU1506DX , BU1507AX .