BLW30 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW30
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1600 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT120A
BLW30 Transistor Equivalent Substitute - Cross-Reference Search
BLW30 Datasheet (PDF)
..1. Size:72K philips
blw30.pdf
blw30.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW30VHF power transistorSeptember 1991Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW30FEATURES QUICK REFERENCE DATARF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profileMODE OF f VCE PL GP C Excellent reliability
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
