All Transistors. DZT5551 Datasheet

 

DZT5551 Datasheet and Replacement


   Type Designator: DZT5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Collector Current |Ic max|: 0.6 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT223
      - BJT Cross-Reference Search

   

DZT5551 Datasheet (PDF)

 ..1. Size:149K  diodes
dzt5551.pdf pdf_icon

DZT5551

DZT5551160V NPN VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: molded plastic. Green molding compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage (150mV max @10mA) Terminals: Finish -

 0.1. Size:486K  diodes
dzt5551q.pdf pdf_icon

DZT5551

DZT5551Q 160V NPN VOLTAGE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT223 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Ter

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MUN5311DW1 | MMBTA55LT1G | BFY67C | DDTA114GCA | MMS8550 | BF792 | UN9110S

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