FJD3076 Specs and Replacement
Type Designator: FJD3076
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 130
Package: TO252
FJD3076 Substitution
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FJD3076 datasheet
FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector D... See More ⇒
Detailed specifications: BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D , 2SA1015 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 .
Keywords - FJD3076 pdf specs
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