FJD3076 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJD3076
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: TO252
FJD3076 Transistor Equivalent Substitute - Cross-Reference Search
FJD3076 Datasheet (PDF)
..1. Size:47K fairchild semi
fjd3076.pdf
fjd3076.pdf
FJD3076Power Amplifier Applications Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 VIC Collector Current 2 A PC Collector D
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
