FJD3076 Transistor. Datasheet pdf. Equivalent
Type Designator: FJD3076
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: TO252
FJD3076 Transistor Equivalent Substitute - Cross-Reference Search
FJD3076 Datasheet (PDF)
1.1. fjd3076.pdf 
Size:47K _fairchild_semi
FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Dissipa
Datasheet: BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D , 2SC828 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 .
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