All Transistors. FJD3076 Datasheet

 

FJD3076 Transistor. Datasheet pdf. Equivalent

Type Designator: FJD3076

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Forward Current Transfer Ratio (hFE), MIN: 130

Noise Figure, dB: -

Package: TO252

FJD3076 Transistor Equivalent Substitute - Cross-Reference Search

FJD3076 Datasheet (PDF)

1.1. fjd3076.pdf Size:47K _fairchild_semi

FJD3076
FJD3076

FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Dissipa

Datasheet: BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D , 2SC828 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 .

 


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