All Transistors. FJD3076 Datasheet

 

FJD3076 Datasheet and Replacement


   Type Designator: FJD3076
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Forward Current Transfer Ratio (hFE), MIN: 130
   Noise Figure, dB: -
   Package: TO252
 

 FJD3076 Substitution

   - BJT ⓘ Cross-Reference Search

   

FJD3076 Datasheet (PDF)

 ..1. Size:47K  fairchild semi
 fjd3076.pdf pdf_icon

FJD3076

FJD3076Power Amplifier Applications Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 VIC Collector Current 2 A PC Collector D

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KT361D1 | BSV29 | BCW10L | HA7510 | MMUN2230LT1 | 2SA1774Q | A747

Keywords - FJD3076 transistor datasheet

 FJD3076 cross reference
 FJD3076 equivalent finder
 FJD3076 lookup
 FJD3076 substitution
 FJD3076 replacement

 

 
Back to Top

 


 
.