All Transistors. FJD3076 Datasheet

 

FJD3076 Datasheet and Replacement


   Type Designator: FJD3076
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Forward Current Transfer Ratio (hFE), MIN: 130
   Noise Figure, dB: -
   Package: TO252
 

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FJD3076 Datasheet (PDF)

 ..1. Size:47K  fairchild semi
 fjd3076.pdf pdf_icon

FJD3076

FJD3076Power Amplifier Applications Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 VIC Collector Current 2 A PC Collector D

Datasheet: BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D , 2SC2240 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 .

History: KT996V-2 | 3CA8550 | 2SC1365 | 3N123 | NSD36C

Keywords - FJD3076 transistor datasheet

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