All Transistors. FJD3305H1 Datasheet

 

FJD3305H1 Datasheet and Replacement


   Type Designator: FJD3305H1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.1 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Forward Current Transfer Ratio (hFE), MIN: 19
   Noise Figure, dB: -
   Package: TO252
 

 FJD3305H1 Substitution

   - BJT ⓘ Cross-Reference Search

   

FJD3305H1 Datasheet (PDF)

 ..1. Size:485K  fairchild semi
 fjd3305h1.pdf pdf_icon

FJD3305H1

April 2009FJD3305H1NPN Silicon TransistorHigh Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK11. Base 2. Collector 3. EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVE

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

Keywords - FJD3305H1 transistor datasheet

 FJD3305H1 cross reference
 FJD3305H1 equivalent finder
 FJD3305H1 lookup
 FJD3305H1 substitution
 FJD3305H1 replacement

 

 
Back to Top

 


 
.