FJD3305H1 Specs and Replacement
Type Designator: FJD3305H1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 19
Package: TO252
FJD3305H1 Substitution
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FJD3305H1 datasheet
April 2009 FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VE... See More ⇒
Detailed specifications: FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D , FJD3076 , BC556 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 , FJL4315 .
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