All Transistors. FJD3305H1 Datasheet

 

FJD3305H1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJD3305H1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.1 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Forward Current Transfer Ratio (hFE), MIN: 19
   Noise Figure, dB: -
   Package: TO252

 FJD3305H1 Transistor Equivalent Substitute - Cross-Reference Search

   

FJD3305H1 Datasheet (PDF)

 ..1. Size:485K  fairchild semi
 fjd3305h1.pdf

FJD3305H1 FJD3305H1

April 2009FJD3305H1NPN Silicon TransistorHigh Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK11. Base 2. Collector 3. EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVE

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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