All Transistors. FJD3305H1 Datasheet

 

FJD3305H1 Datasheet and Replacement


   Type Designator: FJD3305H1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.1 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Forward Current Transfer Ratio (hFE), MIN: 19
   Noise Figure, dB: -
   Package: TO252
 

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FJD3305H1 Datasheet (PDF)

 ..1. Size:485K  fairchild semi
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FJD3305H1

April 2009FJD3305H1NPN Silicon TransistorHigh Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK11. Base 2. Collector 3. EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVE

Datasheet: FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D , FJD3076 , BC639 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 , FJL4315 .

History: CRYQ2369AU | CRYQ3251AU | 2SA1209T | CRYQ2605U | KT349B | TIP41C

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