FJD3305H1 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJD3305H1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Forward Current Transfer Ratio (hFE), MIN: 19
Noise Figure, dB: -
Package: TO252
FJD3305H1 Transistor Equivalent Substitute - Cross-Reference Search
FJD3305H1 Datasheet (PDF)
..1. Size:485K fairchild semi
fjd3305h1.pdf
fjd3305h1.pdf
April 2009FJD3305H1NPN Silicon TransistorHigh Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK11. Base 2. Collector 3. EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
