FJD5304D Datasheet, Equivalent, Cross Reference Search
Type Designator: FJD5304D
SMD Transistor Code: J5304D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO252
FJD5304D Transistor Equivalent Substitute - Cross-Reference Search
FJD5304D Datasheet (PDF)
..1. Size:225K fairchild semi
fjd5304d.pdf
fjd5304d.pdf
July 2010FJD5304DHigh Voltage Fast Switching TransistorFeatures Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast ApplicationEquivalent CircuitCBD-PAK1E1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
